The Nano-Optoelectronic Materials and Device Laboratory of Dr.Kalugin is equipped for electrical and optical characterization of semiconductor structures and devices, including electroluminescence, absorption/transmission/reflection measurements, photoconductivity and photovoltaics, in a very wide spectral (wavelengths from 0.5 µm to 500 µm) and temperature (from 1.4K to 300K) range. Within the laboratory there is:
an advanced step-scan Fourier Transform Infrared Spectrometer (Thermo-Nicolet Nexus 870), equipped with a full set of beamsplitters and detectors (Si liquid Helium-cooled bolometer the far-infrared/THz region, liquid Nitrogen-cooled MCT and InSb detectors for the mid-infrared, Si photodiode for near-infrared and visible spectral regions).
Ametek-made amplifiers and lock-in amplifier, Tektronix 3052B oscilloscope, Keithley multimeter and source meter (K2000 and K2400), the custom-made low-noise electronics (suitable for extremely low-noise measurements of phototransport properties of carbon nanotube field-effect transistors).
high magnetic fields are available using the cryogenic superconducting 8T magnet (American Magnetics Inc) with the set of control equipment and power supply.
p-Ge THz laser and THz and MIR quantum cascade lasers
We fabricate graphene and graphene-based devices using mechanical exfoliation of graphene on Si/SiO2 substrates, and chemical vapor deposition (CVD) of graphene on catalytic substrates. For standard and electron beam lithography we collaborate with the DOE Center for Integrated Nanotechnologies (CINT)-Albuquerque
In addition to the capabilities of our laboratory, we use the Raman spectroscopy laboratory of NMT, and the atomic force microscopy and scanning electron microscopy facilities of CINT.