The Nano-Optoelectronic Materials and Device Laboratory of Dr.Kalugin is equipped for electrical and optical characterization of semiconductor structures and devices, including electroluminescence, absorption/transmission/reflection measurements, photoconductivity and photovoltaics, in a very wide spectral (wavelengths from 0.5 µm to 500 µm) and temperature (from 1.4K to 300K) range. Within the laboratory there is:

We fabricate graphene and graphene-based devices using mechanical exfoliation of graphene on Si/SiO2 substrates, and chemical vapor deposition (CVD) of graphene on catalytic substrates. For standard and electron beam lithography we collaborate with the DOE Center for Integrated Nanotechnologies (CINT)-Albuquerque

In addition to the capabilities of our laboratory, we use the Raman spectroscopy laboratory of NMT, and the atomic force microscopy and scanning electron microscopy facilities of CINT.